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| Smart Low Side Power Switch HITFET BTS 3207N Features * Logic Level Input * Input Protection (ESD) * Thermal shutdown with auto restart * Green product (RoHS compliant) * Overload protection * Short circuit protection * Overvoltage protection * Current limitation * Analog driving possible Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) ID(Nom) EAS 42 500 0.64 150 V mW A mJ 4 3 2 1 VPS05163 Application * All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V DC applications * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS O technology. Fully protected by embedded protection functions. Vbb M HITFET a Current Limitation In Pin 1 Drain Pin 2 and 4 (TAB) OvervoltageProtection Gate-Driving Unit Overtemperature Protection ESD Overload Protection Short circuit Protection Pin 3 Source Datasheet 1 Rev. 1.2, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3207N Maximum Ratings at Tj = 25C, unless otherwise specified Parameter Symbol Drain source voltage Supply voltage for full short circuit protection6) Continuous input voltage1) Continuous input current2) -0.2V VIN 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation 5) TC = 85 C Unclamped single pulse inductive energy 2) Load dump protection VLoadDump2)3) = VA + VS VIN = 0 and 10 V, t d = 400 ms, RI = 2 W, RL = 9 W, VA = 13.5 V Electrostatic discharge voltage2) (Human Body Model) VESD according to Jedec norm EIA/JESD22-A114-B, Section 4 EAS VLD Tj Tstg Ptot VDS Vbb(SC) VIN IIN Value 42 42 -0.22) ... +10 Unit V mA self limited | IIN | 2 -40 ...+150 -55 ... +150 3.8 150 50 W mJ V C 2 kV Thermal resistance junction - ambient: @ min. footprint @ 6 cm 2 cooling area 4) junction-soldering point: 1For input voltages beyond these limits I has to be limited. IN 2not subject to production test, specified by design 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain connection. PCB mounted vertical without blown air. 5not subject to production test, calculated by R thJA and Rds(on) 6For supply voltages above 22V the voltage drop V on has to be limited by Rsc=100mohm/V R thJA 125 72 R thJS 17 K/W K/W Datasheet 2 Rev. 1.2, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3207N Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40...+85 C, V bb = 32 V, VIN = 0 V Tj = 150 C Input threshold voltage ID = 0.3 mA, Tj = 25 C ID = 0.3 mA, Tj = 150 C On state input current On-state resistance VIN = 5 V, ID = 1.4 A, Tj = 25 C VIN = 5 V, ID = 1.4 A, Tj = 150 C On-state resistance VIN = 10 V, I D = 1.4 A, T j = 25 C VIN = 10 V, I D = 1.4 A, T j = 150 C Nominal load current 5) VDS = 0.5 V, Tj < 150C, VIN = 10 V, T A = 85 C Current limit (active if VDS>2.5 V)1) VIN = 10 V, VDS = 12 V, t m = 200 s 1Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on conditi and a short circuit occurs, these values might be exceeded for max. 50 s. 5not subject to production test, calculated by R thJA and Rds(on) Symbol min. VDS(AZ) IDSS VIN(th) 1.3 0.8 IIN(on) R DS(on) R DS(on) ID(Nom) ID(lim) 0.64 5 42 Values typ. max. 55 Unit V A 1.5 4 1.7 10 7.5 8 10 V 2.2 30 600 1200 500 1000 10 A A mW Datasheet 3 Rev. 1.2, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3207N Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Dynamic Characteristics Turn-on time Turn-off time VIN to 90% ID : ton toff -dVDS/dt on dVDS/dtoff 45 60 0.4 0.6 100 100 1.5 1.5 V/s s RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V VIN to 10% ID: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Protection Functions1) Thermal overload trip temperature Thermal hysteresis 2) Input current protection mode Tj = 150 C Unclamped single pulse inductive energy 2) ID = 1.4 A, Tj = 25 C, Vbb = 12 V EAS 150 mJ Tjt DT jt IIN(Prot) 150 175 10 40 300 C K A Symbol min. Values typ. max. Unit Inverse Diode Inverse diode forward voltage IF = 7 A, tm = 250 s, VIN = 0 V, tP = 300 s 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2not subject to production test, specified by design VSD - 1 1.5 V Datasheet 4 Rev. 1.2, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3207N Block diagram Terms Inductive and overvoltage output clamp RL V I IN 1 IN HITFET S VIN 3 2 D ID VDS Vbb Z D S HITFET Input circuit (ESD protection) Short circuit behaviour Gate Drive Input V IN Source/ Ground IIN ID S T j Datasheet 5 Rev. 1.2, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3207N 1 Maximum allowable power dissipation Ptot = f(TS) resp. Ptot = f(TA) @ R thJA=72 K/W 10 W 2 On-state resistance R ON = f(Tj ); ID=1.4A; V IN=10V 1000 mW 8 max. 800 RDS(on) -25 0 25 50 75 100 C 150 max. 7 700 600 500 400 300 200 100 Ptot 6 5 4 3 2 6cm2 1 0 -75 -50 0 -50 -25 0 25 50 75 100 125 C 175 TS ;TA Tj 3 On-state resistance R ON = f(T j); ID= 1.4A; V IN=5V 1250 4 Typ. input threshold voltage VIN(th) = f(Tj); ID = 0.3 mA; VDS = 12V 2 max. mW 1000 V 1.6 RDS(on) 875 750 625 500 375 250 125 0 -50 VGS(th) -25 0 25 50 75 100 125 C 175 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 C 150 Tj Tj Datasheet 6 Rev. 1.2, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3207N 5 Typ. transfer characteristics I D=f(V IN); VDS=12V; T Jstart=25C 8 A 6 Typ. short circuit current ID(lim) = f(Tj); VDS=12V Parameter: V IN 10 A 8 6 5 ID(lim) 7 6 5 5V ID Vin=10V 4 3 4 3 2 2 1 1 0 -50 0 0 1 2 3 4 5 6 7 8 V 10 -25 0 25 50 75 100 125 C 175 VIN Tj 7 Typ. output characteristics I D=f(V DS); T Jstart=25C Parameter: V IN 10 A Vin=10V 7V 8 Off-state drain current IDSS = f(T j) 11 A max. 8 6V 9 8 7 IDSS 5V 4V ID 6 5 4 7 6 5 4 typ. 3 3V 3 2 1 2 1 0 0 1 2 3 4 V 6 0 -50 -25 0 25 50 75 100 125 C 175 VDS Tj Datasheet 7 Rev. 1.2, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3207N 9 Typ. overload current ID(lim) = f(t), Vbb=12 V, no heatsink Parameter: Tjstart 12 10 Typ. transient thermal impedance ZthJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T 10 K/W 2 A -40C D=0.5 0.2 0.1 10 1 ID(lim) 8 85C ZthJA 25C 0.05 0.02 0.01 6 150C 10 0 4 10 2 Single pulse -1 0 0 10 0.5 1 1.5 2 2.5 3 ms -2 4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 s 10 4 t tp 11 Determination of ID(lim) ID(lim) = f(t); t m = 200s Parameter: TJstart 12 A ID(lim) -40C 8 25C 6 85C 4 150C 2 0 0 0.1 0.2 0.3 0.4 ms 0.55 t Datasheet 8 Rev. 1.2, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3207N Package Outlines 1 Package Outlines A 6.5 0.2 3 0.1 4 1.60.1 0.1 MAX. 15 MAX. B 1 2 3 0.7 0.1 4.6 0.25 M A 2.3 0.5 MIN. 0.28 0.04 0...10 0.25 M B GPS05560 Figure 1 PG-SOT223-4 (Plastic Green Small Outline Transistor Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page "Products": http://www.infineon.com/products. Datasheet 9 Dimensions in mm Rev. 1.2, 2008-04-14 3.5 0.2 7 0.3 Smart Low Side Power Switch HITFET BTS 3207N Revision History 2 Version Rev. 1.2 Rev. 1.1 Revision History Date 2008-04-14 2007-03-28 Changes Package information updated to SOT223-4 released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added released production version Rev. 1.0 2004-11-19 Datasheet 10 Rev. 1.2, 2008-04-14 Edition 2008-04-14 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2008. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. |
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